• 姓名: 金智
  • 性别: 男
  • 职称: 研究员
  • 职务: 研发中心主任
  • 学历: 博士
  • 电话: 010-82995586
  • 传真: 
  • 电子邮件: jinzhi@ime.ac.cn
  • 所属部门: 高频高压器件与集成研发中心
  • 通讯地址: 北京市朝阳区北土城西路3号

    简  历:

  • 1999年:毕业于吉林大学,电子工程系,获博士学位

    1999-2002:日本北海道大学,量子电子学研究中心

    2002-2004:德国Duisbur-Essen大学

    2004-2006:日本电气通信大学

    2006-至今:皇家赌场网址hj9990

    社会任职:

    研究方向:

  • 超高频InP基三端电子器件、毫米波电路、化合物半导体超高速数模混合电路

    承担科研项目情况:

  • 973项目“新一代化合物半导体器件和电路研究”子课题“新结构HBT器件”(2008年完成)

    院装备研制项目“3毫米微波器件与电路在片综合测试系统”(2007-2009)

    973项目“超高频大功率化合物半导体基础问题研究”子课题“太赫兹三端电子器件研究”(2010-2015)

    代表论著:

  • [1] Jin Zhi, YB Su, et al. “Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz,” Solid-State Electronics , Vol. 52, 1088, 2008. 

    [2] Jin Zhi, Liu Xinyu, “On the design of base-collector junction of InGaAs/InP DHBT,” Science in China Series E: Technological Sciences, Vol. 52, 1672, 2009.

    [3] Jin Zhi, Su Yongbo, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming, “High Current Multi-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Oscillation Frequency 253 GHz,” Chin. Phys. Lett., Vol. 25, pp. 3075-3078, 2008.

    [4] Jin Zhi, Su Yongbo, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming, “High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with ft of 170 GHz and fmax of 253 GHz,” Chin. Phys. Lett., Vol. 25, pp. 2686-2689, 2008.

    [5] Jin Zhi, Su Yongbo, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming, “High-Speed InGaAs/InP Double Heterostructure Bipolar Transistor with High Breakdown Voltage,” Chin. Phys. Lett., Vol. 25, pp. 2683-2685, 2008.

    [6] Jin Zhi, Liu Xinyu, Wener Prost, F.-J. Tegude, “Surface-recombination-free InGaAs/InP HBTs and the base contact recombination,” Solid-State Electronics, Vol. 52, pp. 1088-1091, 2008.

    [7] Jin Zhi, W. Prost, S. Neumann, F.-J. Tegude, “Current transport mechanism and its effects on the performance of InP-based double heterojuction bipolar transistors with different base structures,” Applied Physics Letters, Vol. 84, 2910, 2004.

    [8] Jin Zhi, S. Neumann, W. Prost, F.-J. Tegude, “Surface recombination mechanism in graded- base InGaAs/InP hetero- structure bipolar transistors,” IEEE Trans. Electron Devices, Vol. 51, 1044, 2004.

    专利申请:

    获奖及荣誉: